features trenchfet power mosfets 175 c junction temperature applications automotive - boardnet 42-v eps and abs - motor drives high current dc/dc converters SUP90N08-06 vishay siliconix new product document number: 72038 s-03918?rev. a, 19-may-03 www.vishay.com 1 n-channel 75-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 75 0.006 @ v gs = 10 v 90 a d g s n-channel mosfet to-220ab top view gd s SUP90N08-06 absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 75 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 90 a c on ti nuous d ra i n c urren t (t j = 175 c) t c = 125 c i d 83 a pulsed drain current i dm 240 a avalanche current i ar 75 repetitive a valanche energy b l = 0.1 mh e ar 280 mj maximum power dissipation b t c = 25 c p d 300 w maximum power dissipation b t a = 25 c d p d 3.7 w operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient?pcb mount d r thja 40 c/w junction-to-case r thjc 0.5 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
SUP90N08-06 vishay siliconix new product www.vishay.com 2 document number: 72038 s-03918?rev. a, 19-may-03 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 75 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 60 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 60 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 30 a 0.0048 0.006 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.0115 ds(on) v gs = 10 v, i d = 30 a, t j = 175 c 0.00145 forward transconductance a g fs v ds = 15 v, i d = 30 a 30 s dynamic b input capacitance c iss 7900 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 950 pf reverse transfer capacitance c rss 550 total gate charge c q g 145 215 gate-source charge c q gs v ds = 35 v, v gs = 10 v, i d = 90 a 30 nc gate-drain charge c q gd ds , gs , d 45 turn-on delay time c t d(on) 25 40 rise time c t r v dd = 35 v, r l 0.39 200 300 ns turn-off delay time c t d(off) v dd = 35 v , r l 0 . 39 i d 90 a, v gen = 10 v, r g = 2.5 65 100 ns fall time c t f 165 250 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 90 a pulsed current i sm 240 a forward voltage a v sd i f = 60 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 80 120 ns peak reverse recovery current i rm(rec) i f = 85 a, di/dt = 100 a/ s 4 7 a reverse recovery charge q rr f , 0.16 0.30 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUP90N08-06 vishay siliconix new product document number: 72038 s-03918?rev. a, 19-may-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2000 4000 6000 8000 10000 12000 0 1530456075 0 4 8 12 16 20 0 50 100 150 200 250 0 50 100 150 200 250 300 0 20 40 60 80 100 120 0.0000 0.0015 0.0030 0.0045 0.0060 0.0075 0 20 40 60 80 100 120 0 50 100 150 200 250 01234567 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - transconductance (s) g fs 25 c -55 c 3 v, 4 v t c = 125 c v ds = 35 v i d = 85 a v gs = 10 thru 6 v v gs = 10 v c iss c oss t c = - 55 c 25 c 125 c - on-resistance ( r ds(on) ) - drain current (a) i d i d - drain current (a) c rss 5 v
SUP90N08-06 vishay siliconix new product www.vishay.com 4 document number: 72038 s-03918?rev. a, 19-may-03 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature avalanche current vs. time 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j - junction temperature ( c) v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c (normalized) - on-resistance ( r ds(on) ) 0 75 80 85 90 95 100 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) t in (sec) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) @ t a = 150 c (v) v (br)dss i d = 10 ma 100 1 0.0001 i av (a) @ t a = 25 c
SUP90N08-06 vishay siliconix new product document number: 72038 s-03918?rev. a, 19-may-03 www.vishay.com 5 thermal ratings 0 20 40 60 80 100 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum drain current vs. case temperature t c - ambient temperature ( c) - drain current (a) i d - drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s 1 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 single pulse 0.05 0.02
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